发明名称 |
CONTROLLING THE PROPERTIES AND UNIFORMITY OF A SILICON NITRIDE FILM BY CONTROLLING THE FILM FORMING PRECURSORS AND TFT DEVICE WITH THE SILICON NITRIDE |
摘要 |
<p>We have developed a method of PECVD depositing a-SiN<SUB>x</SUB>:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m<SUP>2</SUP>, which may be in the range of about 4.1 m<SUP>2</SUP>, and even as large as 9 m<SUP>2</SUP>. The a-SiN<SUB>x</SUB>:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.</p> |
申请公布号 |
KR20060047185(A) |
申请公布日期 |
2006.05.18 |
申请号 |
KR20050031957 |
申请日期 |
2005.04.18 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
CHOI, SOO YOUNG;WON, TAE KYUNG;FURUTA GAKU;WANG QUNHUA;WHITE JOHN M.;PARK, BEOM SOO |
分类号 |
H01L21/205;C23C16/34;H01L21/318;H01L21/336;H01L21/469;H01L29/49;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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