发明名称 PREPARATION OF PHOTOMASK BLANK AND PHOTOMASK
摘要 A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.
申请公布号 KR20060046073(A) 申请公布日期 2006.05.17
申请号 KR20050041065 申请日期 2005.05.17
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 FUKUSHIMA NORIYASU;YOSHIKAWA HIROKI;KANEKO HIDEO
分类号 C23C14/00;C23C14/06;C25B9/00;C25B11/00;C25B13/00;G03C5/00;G03F1/32;G03F1/54;G03F1/68;G03F9/00;H01L21/027 主分类号 C23C14/00
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