发明名称 |
PREPARATION OF PHOTOMASK BLANK AND PHOTOMASK |
摘要 |
A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist. |
申请公布号 |
KR20060046073(A) |
申请公布日期 |
2006.05.17 |
申请号 |
KR20050041065 |
申请日期 |
2005.05.17 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
FUKUSHIMA NORIYASU;YOSHIKAWA HIROKI;KANEKO HIDEO |
分类号 |
C23C14/00;C23C14/06;C25B9/00;C25B11/00;C25B13/00;G03C5/00;G03F1/32;G03F1/54;G03F1/68;G03F9/00;H01L21/027 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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