A semiconductor device, a method for manufacturing a semiconductor device and an epitaxial growth substrate for a semiconductor device

摘要

A semiconductor device has a substrate body, an Al x Ga y In z N (x+y+z=1,x,y,z‰¥0) film epitaxially grown direct on the substrate body or epitaxially grown via a buffer layer on the substrate body, and a metal film provided on the rear surface of the substrate body. In the case of the manufacturing the semiconductor device, the substrate body is heated, by a heater, uniformly and efficiently through the thermal radiation of the heater.