| 发明名称 |
SILICON CARBIDE EPITAXIAL WAFER, METHOD FOR PRODUCING SUCH WAFER, AND SEMICONDUCTOR DEVICE FORMED ON SUCH WAFER |
| 摘要 |
Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1° off from the {0001} surface of silicon carbide having an ±-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved. |
| 申请公布号 |
EP1657740(A1) |
申请公布日期 |
2006.05.17 |
| 申请号 |
EP20040771855 |
申请日期 |
2004.08.19 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
KOJIMA, KAZUTOSHI;KURODA, SATOSHI;OKUMURA, HAJIME |
| 分类号 |
C30B25/02;C23C16/42;C30B25/20;C30B29/36;H01L21/04;H01L21/205;H01L29/04;H01L29/16;H01L29/24;H01L29/78;H01L29/861;(IPC1-7):H01L21/205 |
主分类号 |
C30B25/02 |
| 代理机构 |
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