| 摘要 |
A semiconductor device for electrostatic discharge protection in a semiconductor integrated circuit having MOSFETs, comprising a thyristor (1',2,4-7) and a trigger diode (D;2,8,9,11) for triggering the thyristor into an ON-state, wherein the trigger diode has an n-type cathode high concentration impurity region (9), a p-type anode high concentration impurity region (8) and a gate electrode (14) formed between the two high concentration impurity regions, the gate electrode being composed of the same material as that of a gate electrode of a MOSFET comprised in the semiconductor integrated circuit, and wherein the thyristor has a p-type high concentration impurity region (4) that forms an anode and an n-type high concentration impurity region (6) that forms a cathode, and a p-type high concentration impurity region (7) in a p well (1') and connected to a resistor and/or an n-type high concentration impurity region (5) provided in an n well (2) and connected to a resistor. |
