LINE LAYOUT STRUCTURE OF SEMICONDUCTOR MEMORY DEVICE,申请号KR20050028863-传众专利搜索

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发明名称	LINE LAYOUT STRUCTURE OF SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	KR20060045554(A)	申请公布日期	2006.05.17
申请号	KR20050028863	申请日期	2005.04.07
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	JO, YUN JIN;YANG, HYANG JA
分类号	H01L27/11;(IPC1-7):H01L27711	主分类号	H01L27/11
代理机构		代理人
主权项
地址

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