发明名称 POLISHING COMPOSITION AND POLISHING METHOD
摘要 A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, potassium hydroxide, sodium hydroxide, ammonia, tetramethylammonium hydroxide, piperazine anhydride, or piperazine hexahydrate. The anionic surfactant is at least one selected from a sulfonic acid surfactant, a carboxylic acid surfactant, and a sulfuric acid ester surfactant. The polishing composition can be suitably used in applications for polishing a silicon wafer.
申请公布号 KR20060044389(A) 申请公布日期 2006.05.16
申请号 KR20050022622 申请日期 2005.03.18
申请人 FUJIMI INCORPORATED 发明人 MIWA TOSHIHIRO
分类号 B24B37/00;C09K3/14;B44C1/22;C09G1/02;C09K13/00;H01L21/302;H01L21/304;H01L21/306 主分类号 B24B37/00
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