发明名称 Memory sensing circuit and method for low voltage operation
摘要 A sensing module operates with a sense amplifier sensing a conduction current of a memory cell via a coupled bit line under constant voltage condition in order to minimize bit-line to bit-line coupling. The rate of discharge of a dedicated capacitor as measured by a change in the voltage drop there across in a predetermined period is used to indicate the magnitude of the conduction current. The voltage cannot drop below a minimum level imposed by a circuit for maintaining the constant voltage condition on the bit line. A voltage shifter is used to boost the voltage during the discharge and to unboost the voltage after the discharge, so that the change in voltage drop properly reflects the rate of discharge without running into the minimum level.
申请公布号 US7046568(B2) 申请公布日期 2006.05.16
申请号 US20040015199 申请日期 2004.12.16
申请人 SANDISK CORPORATION 发明人 CERNEA RAUL-ADRIAN
分类号 G11C7/02;G11C7/00;G11C7/06;G11C11/56;G11C16/26;G11C16/28 主分类号 G11C7/02
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