| 发明名称 |
SEMICONDUCTOR DEVICE, PRODUCING METHOD OF SEMICONDUCTOR SUBSTRATE, AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
In a semiconductor device including an insulative substrate and a thin film device formed thereon, a thin film transistor having a non-single crystalline silicon thin film and a transistor having a single crystalline silicon thin film are intermixed, and a gate electrode film of the thin film transistor having single crystalline silicon is made of a material including a metal whose mass number is larger than that of silicon or a compound containing the metal. |
| 申请公布号 |
KR20060044615(A) |
申请公布日期 |
2006.05.16 |
| 申请号 |
KR20050024000 |
申请日期 |
2005.03.23 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TAKAFUJI YUTAKA;ITOGA TAKASHI;DROES STEVEN R.;MORIGUCHI MASAO |
| 分类号 |
G02F1/1368;H01L29/786;H01L21/00;H01L21/02;H01L21/265;H01L21/336;H01L21/58;H01L21/60;H01L21/68;H01L21/77;H01L21/8234;H01L27/08;H01L27/088;H01L27/12;H01L27/32;H01L29/04;H01L29/423;H01L29/49;H01L51/56 |
主分类号 |
G02F1/1368 |
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