摘要 |
<p>PROBLEM TO BE SOLVED: To provide the manufacturing method of a BGA-type semiconductor device, which can thin and integrate the device, while a semiconductor element and a wiring board are connected by a wire bonding method. SOLUTION: The method includes a process for forming lead wiring and an electrode pad on the surface of the wiring board 1, a process for forming a through-hole 11 for storing the semiconductor element 3 in the wiring board 1, a process for bonding a film 2 to the wiring board 1 so that at least the through-hole 11 is blocked, a process for fitting the semiconductor element 3 in a recessed part formed by the film 2 and the through-hole 11 and connecting the electrode pad and the electrode of the semiconductor element 3 by a metal thin wire W, a process for sealing the semiconductor element 3 and the metal thin wire W by insulation resin 4, a process for fitting a solder ball 5, so that it can be conducted with the electrode pad, and a process for peeling off the film 2 from the wiring board 1, after a sealing processing.</p> |