Power transistor containing in its semiconductor volume several transistor cells in parallel, with lateral, highly conductive semiconductor layer buried under cells and at least one terminal

摘要

Semiconductor volume (2) of power transistor (20) contains several transistor cells in parallel, under which is buried lateral, highly conductive semiconductive layer (4). Buried layer can be contacted from top side of transistor by at least one terminal (29). At least one terminal is formed within trench (24), extending from top side of transistor towards buried layer. Preferably, trench transistor with gate electrode (26) in at least one trench for switching of power transistor, with terminal of buried layer in at least one trench. Independent claims are included for method for forming power transistor.