发明名称 |
Applying epitaxial silicon in disposable spacer flow |
摘要 |
A process for forming active transistors for a semiconductor memory device by the steps of: forming transistor gates having generally vertical sidewalls in a memory array section and in periphery section; implanting a first type of conductive dopants into exposed silicon defined as active area regions of the transistor gates; forming temporary oxide spacers on the generally vertical sidewalls of the transistor gates; after the step of forming temporary spacers, implanting a second type of conductive dopants into the exposed silicon regions to form source/drain regions of the active transistors; after the step of implanting a second type of conductive dopants, growing an epitaxial silicon over exposed silicon regions; removing the temporary oxide spacers; and forming permanent nitride spacers on the generally vertical sidewalls of the transistor gates.
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申请公布号 |
US2006091479(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050305597 |
申请日期 |
2005.12.16 |
申请人 |
CHO CHIH-CHEN;PING ER-XUAN |
发明人 |
CHO CHIH-CHEN;PING ER-XUAN |
分类号 |
H01L29/76;H01L21/285;H01L21/8234;H01L21/8242 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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