Magnetic random access memory devices including magnets adjacent magnetic tunnel junction structures and related methods

摘要

A magnetic random access memory device may include a memory cell access transistor on a substrate, a bit line spaced apart from the substrate, and a magnetic tunnel junction structure electrically coupled between the bit line and the memory cell access transistor. At least one magnet may be positioned adjacent a sidewall of the magnetic tunnel junction structure and may be configured to provide a magnetic field through the magnetic tunnel junction structure. Related methods of operating magnetic random access memory devices are also discussed.