METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE WITH INCREASED OVERLAY MARGIN,申请号KR20040087687-传众专利搜索

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发明名称	METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE WITH INCREASED OVERLAY MARGIN
摘要
申请公布号	KR20060038595(A)	申请公布日期	2006.05.04
申请号	KR20040087687	申请日期	2004.10.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	PARK, HAE CHAN;YOU, BYOUNG HWA
分类号	H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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