发明名称 |
Resonant tunneling device using metal oxide semiconductor processing |
摘要 |
An embodiment of the present invention is a technique to fabricate a semiconductor device having low off state leakage current. A gate structure of a first device is formed on a substrate layer having a hardmask. A channel is formed underneath the gate structure having a width to support the gate structure. An oxide or a dielectric layer is deposited on the substrate layer. A doped polysilicon layer is deposited on the oxide layer. A recessed junction area is formed on the doped polysilicon layer between the first device and an adjacent device.
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申请公布号 |
US2006091467(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20040977261 |
申请日期 |
2004.10.29 |
申请人 |
DOYLE BRIAN S;DATTA SUMAN;BRASK JUSTIN;KAVALIEROS JACK;MAJUMDAR AMLAN;RADOSAVLJEVIC MARKO;CHAN ROBERT S |
发明人 |
DOYLE BRIAN S.;DATTA SUMAN;BRASK JUSTIN;KAVALIEROS JACK;MAJUMDAR AMLAN;RADOSAVLJEVIC MARKO;CHAN ROBERT S. |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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