发明名称 |
FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, PROGRAM AND RECORDING MEDIUM |
摘要 |
<p>Bonding between a Cu diffusion preventing film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming a bonding film on the Cu diffusion preventing film formed on the substrate to be processed, and a second process of forming a Cu film on the bonding film. The bonding film includes Pd.</p> |
申请公布号 |
WO2006046386(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
WO2005JP18287 |
申请日期 |
2005.10.03 |
申请人 |
TOKYO ELECTRON LIMITED;KOJIMA, YASUHIKO;YOSHII, NAOKI |
发明人 |
KOJIMA, YASUHIKO;YOSHII, NAOKI |
分类号 |
H01L21/28;H01L21/3205;C23C16/18;C23C16/50;H01L23/52 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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