发明名称 |
Transparent oxide electrode film and manufacturing method thereof, transparent electroconductive base Material, solar cell and photo detection element |
摘要 |
A transparent oxide electrode film comprises indium oxide containing titanium, in which indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio of 0.003-0.12. The indium oxide is crystalline. The electrode film has a resistivity of =5.7X10 -> 4>omega cm. Independent claims are also included for: (a) manufacturing a transparent oxide electrode film by sputtering method using a sputtering target manufactured from an oxide sintered body for which the constituent elements are indium, titanium, or oxygen; or a sputtering target manufactured from an oxide sintered body for which the constituent elements are indium, titanium, tungsten, and oxygen, at a substrate temperature of >=100[deg]C using mixed gas of argon and oxygen containing >=0.25% oxygen as the sputtering gas; (b) a solar cell having sequentially layered construction comprising substrate on which an electrode is provided, a conductive metal substrate, a light absorbing layer of p-type semiconductor, middle layer of an n-type semiconductor, a window layer, and an n-type transparent electrode layer; and (c) a photo detection element comprising a pair of electrodes and a layer of photo detection materials between the electrodes. |
申请公布号 |
EP1416541(A3) |
申请公布日期 |
2006.05.03 |
申请号 |
EP20030256274 |
申请日期 |
2003.10.03 |
申请人 |
SUMITOMO METAL MINING CO., LTD. |
发明人 |
ABE, YOSHIYUKI,;ISHIYAMA, NORIKO, |
分类号 |
C23C14/08;H01L31/0224;C03C17/245;C03C17/34;C23C14/06;H01B1/08;H01B5/14;H01B13/00;H01L31/04;H01L31/10 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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