Semiconductor device suited for a high frequency amplifier

摘要

According to the present invention, there is a provided a semiconductor device having, a collector contact layer made of an n-type GaAs layer; a first collector layer formed on the collector contact layer and made of an n-type GaAs layer; a second collector layer formed on the first collector layer and made of a p-type GaAs layer; a third collector layer formed on the second collector layer and made of an n-type InGaP layer; a fourth collector layer formed on the third collector layer and made of an n-type InGaP layer having an impurity concentration higher than that of the third collector layer; a fifth collector layer formed on the fourth collector layer and made of an n-type GaAs layer; a base layer formed on the fifth collector layer and made of a p-type GaAs layer; and an emitter layer formed on the base layer and made of an n-type InGaP layer.