发明名称 |
Non-volatile semiconductor memory with single layer gate structure |
摘要 |
A semiconductor device of this invention is a single-layer gate nonvolatile semiconductor memory in which a floating gate having a predetermined shape is formed on a semiconductor substrate. This floating gate opposes a diffusion layer serving as a control gate via a gate oxide film and is capacitively coupled with the diffusion layer by using the gate oxide film as a dielectric film. The diffusion layer immediately below the dielectric film is insulated from the semiconductor substrate by an insulating film such as a silicon oxide film. A pair of diffusion layers are formed in surface regions of the semiconductor substrate on the two sides of the floating gate extending on a tunnel oxide film. This invention can realize a reliable semiconductor device which is a single-layer gate semiconductor device by which a low-cost process is possible, has a control gate which can well withstand a high voltage applied when data is erased or written, and can prevent an operation error by minimizing variations in the threshold value.
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申请公布号 |
US7038269(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040953094 |
申请日期 |
2004.09.30 |
申请人 |
PEGRE SEMICONDUCTORS, LLC. |
发明人 |
KUMAZAKI YOSHIHIRO |
分类号 |
H01L21/8247;H01L29/788;H01L21/76;H01L21/8246;H01L27/105;H01L27/115;H01L27/12;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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