LITHOGRAPHY SYSTEM, METHOD FOR ADJUSTING TRANSPARENT CHARACTERISTICS OF OPTICAL PATH IN LITHOGRAPHY SYSTEM, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR REFLECTION ELEMENT USED IN LITHOGRAPHY SYSTEM, AND REFLECTION ELEMENT MANUFACTURED BY IT

摘要

PROBLEM TO BE SOLVED: To provide a lithography device in which intensity profile of an EUV radiation ray reaching a target part of a substrate is substantially uniformed.

SOLUTION: This lithography system comprises a radiation ray system providing a radiation beam, a lighting system so constituted as to adjust a condition of the radiation beam, a support so constituted as to support a patterning device providing a pattern to a cross section of a projection beam, a substrate table holding the substrate, a projection system for projecting the patterned beam to the target part of the substrate, and a transmission adapter arranged along the optical path. The radiation ray system comprises a radiation source generating the radiation beam. The intensity profile which is a function of wavelength of the radiation beam and/or patterned beam is so adjusted as to be equal to a specified intensity profile, by the transmission adapter.

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