| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device capable of stably providing an ion beam having a relatively small spot size, even of low energy and large current by adjusting the horizontal and vertical outside diameters of the ion beam. SOLUTION: This ion implantation device 10 is so structured that ions B are extracted from an ion source 110 for generating the ions B and desired ion species are selected by a mass separator 120; the ion species, having passed through a mass separation slit 130 disposed on the downstream side of the mass separator 120, are accelerated or decelerated to the desired energy by an acceleration/deceleration tube 140; and the ions B are focused by a quadrupole lens disposed on the downstream side of the acceleration/deceleration tube 140; and desired ions B are implanted into an implantation surface of a substrate. An adjusting electrostatic quadrupole lens 20 for adjusting the outside diameter of the ion beam B is disposed between the mass separation slit 130 and the acceleration/deceleration tube 140. COPYRIGHT: (C)2006,JPO&NCIPI
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