High voltage transistor and methods of manufacturing the same

摘要

In a HV transistor having a high breakdown voltage and a method of manufacturing the same, a first insulation pattern is formed on a semiconductor substrate by oxidizing a portion of the substrate, and a second insulation pattern is formed such that at least a portion of the first insulation pattern is covered with the second insulation pattern. A gate electrode including a first end portion and a second end portion opposite to the first end portion is formed on the substrate by depositing conductive materials onto the substrate. The first end portion is formed on the first insulation pattern and the second end portion is formed on the second insulation pattern. Source/drain regions are formed at surface portions of the substrate by implanting impurities onto the substrate. Electric field intensity at an edge portion of the gate electrode is reduced, and the HV transistor has a high breakdown voltage.