METHODS OF OPTIMIZATION OF IMPLANT CONDITIONS TO MINIMIZE CHANNELING AND STRUCTURES FORMED THEREBY
摘要
Methods of forming a microelectronic structure are described. Those methods comprise implanting a first concentration of a species into an active area with a first energy, wherein the species pre-damages a portion of the active area, and then implanting a second concentration of the species into the active area with a second energy, wherein the total concentration of the species does not substantially penetrate an underlying channel region.
申请公布号
WO2006044745(A2)
申请公布日期
2006.04.27
申请号
WO2005US37168
申请日期
2005.10.13
申请人
INTEL CORPORATION;RANADE, PUSHKAR;LIKAK, AARON;NATARAJAN, SANJAY;ZIETZ, GERARD;MAIZ, JOSE
发明人
RANADE, PUSHKAR;LIKAK, AARON;NATARAJAN, SANJAY;ZIETZ, GERARD;MAIZ, JOSE