| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of collectively adjusting the threshold of gate electrode of a transistor with respect to each regions having different function. <P>SOLUTION: The semiconductor device is provided with a p-type Si substrate 109, a p-type annular well 181 provided at the side of an element forming surface of the p-type Si substrate 109 and an n-type annular well 183 provided at the inside of the p-type annular well 181. Further, an SRAM-P (Static Random Access Memory-P) type well 185 and an SRAM-N (Static Random Access Memory-N) type well 189 are provided at the inside of the n-type annular well 183. A deep n-type well 133 is provided at the bottom surface side of the SRAM-P type well 185 and the SRAM-N type well 189. A plurality of p-type wells 103 are provided at the outside of the p-type annular well 181, and an n-type well 101 is provided so as to surround respective outside surfaces of the p-type wells 103. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
