| 摘要 |
A method of implanting ions in a semiconductor body in which a thin conductive layer is applied on the surface parts or surface adjacent parts at which the ion beam is to be directed. The ions penetrate the thin layer which maintains the surface parts or surface adjacent parts, including metal electrode layers when present, at a common potential. By suitable connection of the thin layer charging of said parts during implantation can be prevented. Subsequent to implantation the thin conductive layer is removed without effecting any substantial removal of the surface parts or surface adjacent parts. The specification describes the manufacture of a tetrode insulated gate field effect transistor, the applied thin conductive layer preventing charging of the gate electrodes and consequent breakdown of the underlying insulating layers during ion implantation. |
