Method of manufacturing a semiconductor device

摘要

The method involves introducing an impurity that acts as a dopant in a semiconductor region (3) into a silicide layer (2). The layer is located partially beneath a monocrystalline semiconductor region that is adjacent to the layer, so that the layer is partially buried beneath a layer of the semiconductor region. The impurity is partially diffused into an adjacent semiconductor region from the partially buried silicide layer. Independent claims are also included for the following: (A) a semiconductor article with a buried silicide layer (B) an application of the semiconductor article manufacturing method (C) a high frequency bi-polar transistor with a emitter semiconductor region (D) an application of a silicide layer.