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发明名称
DEVICE AND METHOD OF FABRICATING BURIED INSULATOR LAYER USING HIGH-POWER PULSED RF PLASMA
摘要
申请公布号
KR100576194(B1)
申请公布日期
2006.04.26
申请号
KR20040102291
申请日期
2004.12.07
申请人
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人
HAN, SEUNG HEE;LEE, YEON HEE;KIM, YOUNG WOO
分类号
H01L21/205
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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