摘要 |
A Bi-based oxide superconductor thin film whose c-axis is oriented parallel to the substrate and whose a-axis (or b-axis) is oriented perpendicular to the substrate, is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. The method of manufacturing an a-axis oriented Bi-based oxide superconductor thin film, involves an epitaxial growth process using an LaSrAlO<SUB>4 </SUB>single crystal substrate of a ( 110 ) plane or a LaSrGaO<SUB>4 </SUB>single crystal substrate of a (110) plane, for which the lattice constant matches well with a ( 100 ) plane of a Bi-2223 oxide superconductor. By this method, rather than the normally easily obtained Bi-2212, an a-axis oriented film of Bi-2223 showing an extremely high superconductive transition temperature even for a Bi-based oxide superconductor can be selectively manufactured.
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