| 摘要 |
PROBLEM TO BE SOLVED: To form a high performance complementary MISFET by increasing both electron and hole mobilities of a MISFET using a high-k film. SOLUTION: A p well layer 2 and an n well layer 3 are formed in the front surface of a silicon substrate 1. In an n channel MISFET partitioned by an element isolation region 4; an n channel interface layer 5 without nitrogen addition, an n channel high dielectric gate insulating film 6 without the nitrogen addition, and an n channel gate electrode 7, are formed. And, an n-type source/drain diffusion layer 8 is prepared. With respect to this, in a p channel MISFET; a p channel interface layer 9 with nitrogen addition, a p channel high dielectric gate insulating film 10, and a p channel gate electrode 11, are formed. And, a p-type source/drain diffusion layer 12 is prepared. COPYRIGHT: (C)2006,JPO&NCIPI
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