Transistor with a strained region and method of manufacture

摘要

A transistor structure comprises a channel region overlying a substrate region. The substrate region comprises a first semiconductor material with a first lattice constant. The channel region comprises a second semiconductor material with a second lattice constant. The source and drain regions are oppositely adjacent the channel region and the top portion of the source and drain regions comprise the first semiconductor material. A gate dielectric layer overlies the channel region and a gate electrode overlies the gate dielectric layer.