发明名称 METHOD FOR CONTROLLING DIAMETER OF SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for controlling the diameter of a single crystal, by which the diameter of the single crystal can be precisely controlled while maintaining the quality of the crystal being pulled without using a large-scale process and apparatus, and the cost for pulling the single crystal can be reduced. SOLUTION: In the method for controlling the diameter of the single crystal by detecting and controlling the diameter of the single crystal being pulled, on the basis of information related to the outer diameter or the width of a fusion ring which is generated in a meniscus in the vicinity of the single crystal being pulled when the single crystal is pulled by a Czochralski method, the diameter of the single crystal being pulled is detected and controlled while shielding light radiated toward the vicinity of the meniscus from a crucible by the cylindrical part of a light shielding member which is provided in parallel with the wall face of the crucible and through which the single crystal being pulled penetrates, and further shielding light radiated toward the vicinity of the meniscus from a melt by a horizontal part of the light shielding member, which is inwardly extended from the lower end of the cylindrical part in parallel with the upper surface of the melt so that the interval between itself and the upper surface of the melt is≤5 cm, and which has a ring shape. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005041705(A) 申请公布日期 2005.02.17
申请号 JP20030200037 申请日期 2003.07.22
申请人 TOSHIBA CERAMICS CO LTD 发明人 WATANABE MASAYUKI;KAJIMA KAZUHIKO
分类号 C30B15/26;C30B29/06;(IPC1-7):C30B15/26 主分类号 C30B15/26
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