发明名称 MULTI-ZONE ATOMIC LAYER DEPOSITION APPARATUS AND METHOD
摘要 <p>Method and apparatus for producing a thin film on a substrate set in a moving substrate holder is disclosed. Within a deposition chamber, a substrate is moved across a series of dedicated deposition zones and is subjected to repeated surface reactions with at least two different reactants. The reactants are fed into the dedicated deposition zones from a gas supply system that may include high speed valves that are timed to coordinate with the passage of the substrate so as to inject reactive gases repeatedly into the deposition zones. The dedicated deposition zones are separated by dedicated exhaust zones that direct each reactive gas along separate paths so as to minimize or eliminate mixing of different reactive species in the exhaust thus decreasing deposition within the exhaust system.</p>
申请公布号 WO2006042074(A2) 申请公布日期 2006.04.20
申请号 WO2005US36088 申请日期 2005.10.04
申请人 ATOMICITY SYSTEMS, INC.;ANTONISSEN, ERIC 发明人 ANTONISSEN, ERIC
分类号 C23C16/00 主分类号 C23C16/00
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