| 摘要 |
PROBLEM TO BE SOLVED: To propose a semiconductor laser which can prevent the displacement of a central point of intensity distribution curve of laser light. SOLUTION: A semiconductor substrate is provided at least with a window area including a light non-absorbing area that is formed adjacent to a first end face and is formed by a specified length A along the optical axis from the first end face. A metallic thin film is formed on the upper surface of the semiconductor substrate, and a gold plating layer is formed thereon to be given driving voltage. The gold plating layer has an end face extending toward the first end face, which is located in a range between the first end face of the semiconductor substrate and a middle position relevant to one half of a length A of the light non-absorbing area along the optical axis. COPYRIGHT: (C)2006,JPO&NCIPI
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