| 摘要 |
PROBLEM TO BE SOLVED: To enable a static induction transistor using a silicon carbide to make high-speed switching operation by shortening the gate delay by forming a gate region having a small sheet resistance in the transistor. SOLUTION: A gate region 12 is raised to the upper parts of trench grooves 110-114 by means of tungsten plug films (gate raising metallic films) 31 formed by the CVD method from gate leading-out layers 13 at the bottoms of the trench grooves 110-114 of an SIT in which the gate region 12 is formed along the trench grooves 110-114, and the longer edges of the rectangle called tanzaku constituted of the trench grooves 110-114 are shortened to a degree at which the gate delay does not become problem. Then the tungsten plug films are connected to each other above the grooves 110-114. COPYRIGHT: (C)2006,JPO&NCIPI
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