METAL CMP SLURRY COMPOSITIONS WITH REDUCED SUSCEPTIBILITY IN MICRO-SCRATCHING AND SUITABLE FOR MECHANICAL POLISHING OF METAL OXIDE

摘要

PROBLEM TO BE SOLVED: To provide metal CMP slurry compositions, having relatively low chemical polishing rate and relatively high mechanical polishing rate.

SOLUTION: Slurry precursor composite which is used for chemical mechanical polishing of a metallization layer on a semiconductor substrate contains an aqueous mixture; and the aqueous mixture contains pH modifier, wear agent, metal-propylenediaminetetraacetate (M-PDTA) complex, wetting agent and water.

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