| 摘要 |
PROBLEM TO BE SOLVED: To reconcile a high-speed operation and a high temperature operation, while maintaining light-emitting efficiency in a distributed feedback semiconductor laser. SOLUTION: The semiconductor laser comprises a quantum well layer 205a, an active layer 205, consisting of multiple quantum wells which are alternately superposed by a barrier layer 205b a forbidden band width of which is larger than the quantum well layer 205a, and a diffraction grating layer 202 containing phase shift structure established along the optical waveguide direction in the vicinity of the active layer 205. A coupling coefficientκof the diffraction grating 202 is 100cm<SP>-1</SP>or larger, and distortion with reverse polarity opposite to the quantum well layer 205a is impressed on the barrier layer 205b, while distortion is impressed to the quantum well layer 205a which constitutes the active layer 205, so that it becomes possible to impress high distortions on the quantum well layer 205a and to obtain a DFB laser, capable of high-speed operation for modulation over a wide temperature range derived with a high relaxation oscillation frequency. COPYRIGHT: (C)2006,JPO&NCIPI
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