| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus by the arc-type ion plating capable of depositing a film containing a plurality of kinds of elements by employing a cathode material containing two or more kinds of elements, and depositing a smooth film while suppressing droplet deposition. SOLUTION: In the film deposition method and the film deposition apparatus A by the arc-type ion plating, a cathode 12 consisting of a material containing two or more kinds of elements is employed, the film deposition distance L between a cathode arc traveling face 121 and a work W for film deposition at the normal film deposition position P is set to be≥150 mm and≤350 mm, and the vacuum arc discharge is performed in the gas atmosphere for film deposition. Further, the gas pressure for film deposition is set to be in a range of 4 Pa -7 Pa, the magnetic field is applied to the plasma generation area, and the magnetic field consists of lines 131 of magnetic force in which the angle formed between the cathode arc traveling face and the normal is≤30°at the position of the cathode arc traveling face 121. COPYRIGHT: (C)2006,JPO&NCIPI
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