| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting device incorporating a tunnel junction and dispersion structure. <P>SOLUTION: The device is a group III nitride element including a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer, it can include a second n-type layer and a tunnel junction separating the first and the second n-type layers, a first and a second contact are electrically contacted with the first and the second n-type layers, the first and the second contacts are formed by the same material in which a reflection factor with respect to a light emitted by the active region is greater than 75%, and it can include a texture layer which is arranged between the second n-type layer and the second contact or formed on growth substrate front surface opposite to an element layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
