| 摘要 |
PROBLEM TO BE SOLVED: To provide a high conductive power semiconductor device having a high breakdown voltage. SOLUTION: The power semicondutor device includes a first group III nitride hetero-junction, a second group III nitride hetero-junction arranged on the first group III nitride hetero-junction, a first electrode electrically connected to the second group III nitride hetero-junction, and a second electrode electrically connected to the second group III nitride hetero-junction and isolated from the first electrode. The first electrode forms a Schottky contact with the second group III hetero-junction, and the second electrode forms an ohmic contact with the second group III nitride hetero-junction. COPYRIGHT: (C)2006,JPO&NCIPI |
