| 摘要 |
PROBLEM TO BE SOLVED: To reduce the occurrence of abnormal growth in deposited film formation using plasma generated by high frequency electric power. SOLUTION: The deposited film formation system comprises a reaction vessel 101 whose inside can be evacuated. The inside of the reaction vessel 101 is provided with a gas feeding means 110 of feeding a gaseous raw material. A plurality of cylindrical substrates 105 are arranged at equal intervals on the same circumference. A high frequency electric power introduction means 102 is arranged at the outside of the reaction vessel 101, and the gaseous raw material is excited and dissociated by high frequency electric power, thereby a deposited film is formed on each cylindrical substrate 105. For the deposited film formation system, a cylindrical member 111 is installed inside the region surrounded by the cylindrical substrates 105 arranged on the same circumference, and can be rotated by a rotating means. COPYRIGHT: (C)2006,JPO&NCIPI
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