发明名称 Manufacturing method of passivation layer on wafer and manufacturing method of bumps on wafer
摘要 A manufacturing method of wafer passivation layer and manufacturing method of wafer bump. First, a wafer is provided with an active surface, which has a passivation layer and reveals a plurality of bonding pads on said passivation. Next, a redistribution layer is formed on the wafer and is electrically connected with the bonding pad. Further, a dielectric layer is formed on the wafer to cover the redistribution layer. Then, said dielectric layer is cured, followed by a patterning process, so that part of the redistribution layer can be revealed from the passivation. Next, plasma cleaning is performed on the active surface of the wafer, and the dielectric layer is cured again. Further, a bumping process is performed. This manufacturing method of wafer passivation and manufacturing method of wafer bump can effectively reduce potential damages of the passivation in further processing procedures and enhance yields.
申请公布号 US2006084259(A1) 申请公布日期 2006.04.20
申请号 US20050245175 申请日期 2005.10.07
申请人 ADVANCED SEMICONDUCTOR ENGINEERING INC. 发明人 TSAI MENG-JIN
分类号 H01L21/60 主分类号 H01L21/60
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