发明名称 THIN LAYER TRANSISTOR, ACTIVE MATRIX DISPLAY DEVICE USING IT, AND LIQUID CRYSTAL DISPLAY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin layer transistor of superior adhesiveness and conductivity with a substrate, which has an electrode simply formed and in which a high resolution of an electrode is obtained, an active matrix display device of superior electrical characteristics comprising the thin layer transistor, and to provide a liquid crystal display device in which the conductivity of the driver input/output wiring of a driving LSI chip is improved and wiring is formed with a high resolution. <P>SOLUTION: Energy is given in a pattern shape to a substrate which is formed by bonding a compound having a polymerization initiating section where radical polymerization can be initiated by optical cleavage and a base material bonding section, on the surface of the substrate, by contacting an unsaturated compound in which radical polymerization is possible, and a pattern-shaped graft polymer is generated on the substrate, and then a conductive material is provided to the graft polymer generating region. A conductive layer formed in this way is made a gate electrode 110. The thin layer transistor is formed by forming a gate insulating film 114, a semiconductor film 118, a source electrode 120, and a drain electrode 122 on the gate electrode 110 in this order. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006108622(A) 申请公布日期 2006.04.20
申请号 JP20050148076 申请日期 2005.05.20
申请人 FUJI PHOTO FILM CO LTD 发明人 KAWAMURA KOICHI
分类号 H01L21/336;G02F1/1368;G09F9/30;H01L21/28;H01L21/288;H01L29/786 主分类号 H01L21/336
代理机构 代理人
主权项
地址