发明名称 MANUFACTURING METHOD OF PIEZOELECTRIC THIN FILM ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To compose an SMR type piezoelectric thin film vibrator with a piezoelectric thin film having excellent crystalinity. <P>SOLUTION: A substrate 201 made of, e.g. silicon is adhered onto a low acoustic impedance layer 105 being an uppermost layer of an acoustic multilayer film 110 and thereafter an insulation substrate 101 is exfoliated from part of an exfoliation layer 102, the acoustic multilayer film 110, an electrode film 104, and a piezoelectric thin film 103 are laminated on the substrate 201 in this order, and the surface of the piezoelectric thin film 103 (a side opposite to a forming side of the electrode film 104) is exposed. It is possible to exfoliate the insulation substrate 101 by selectively solving the exfoliation layer 102 made of gold with the use of etching liquid comprising iodine, ammonium iodide, water, and ethanol. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006109129(A) 申请公布日期 2006.04.20
申请号 JP20040293646 申请日期 2004.10.06
申请人 KYOCERA KINSEKI CORP 发明人 DOI ARATA;ISHIDA YASUAKI
分类号 H03H3/02;C23C14/08;H01L41/18;H01L41/187;H01L41/22;H01L41/319;H03H9/17 主分类号 H03H3/02
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