发明名称 CMOS circuits with protection for a single event upset
摘要 A dual structure is introduced to the transistor in a flip-flop or a data input step controlled by a clock of a semiconductor logic circuit. The dual structure is formed by connecting a transistor with a MOS transistor having a channel of the same conductivity type in series with respect to the line of a source or drain and connecting their gates to each other, or by connecting an inverter with p-MOS transistors, one for VDD side and one for VSS side of the output step. The dual structure prevents single event phenomenon in a semiconductor logic circuit, such as inverter, SRAM and data latch circuit. <IMAGE>
申请公布号 EP1533901(A3) 申请公布日期 2006.04.19
申请号 EP20050000654 申请日期 2003.03.03
申请人 NATIONAL SPACE DEVELOPMENT AGENCY OF JAPAN 发明人 MATSUDA, SUMIO;KUBOYAMA, SATOSHI;DEGUCHI, YASUSHI
分类号 G11C11/41;H03K19/003;G11C11/412;H01L21/8244;H01L27/02;H01L27/10;H01L27/11;H03K3/037;H03K3/356;H03K19/0948 主分类号 G11C11/41
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