发明名称 Ferroelectric capacitor and process for its manufacture
摘要 In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer.
申请公布号 US7031138(B2) 申请公布日期 2006.04.18
申请号 US20020315915 申请日期 2002.12.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MOON BUM-KI;BEITEL GERHARD;ARISUMI OSAMU;ITOKAWA HIROSHI
分类号 H01G4/20;H01G4/06;H01L21/02 主分类号 H01G4/20
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