发明名称 |
Ferroelectric capacitor and process for its manufacture |
摘要 |
In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer.
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申请公布号 |
US7031138(B2) |
申请公布日期 |
2006.04.18 |
申请号 |
US20020315915 |
申请日期 |
2002.12.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MOON BUM-KI;BEITEL GERHARD;ARISUMI OSAMU;ITOKAWA HIROSHI |
分类号 |
H01G4/20;H01G4/06;H01L21/02 |
主分类号 |
H01G4/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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