发明名称 Embedded bi-layer structure for attenuated phase shifting mask
摘要 An embedded bi-layer structure for an attenuated phase-shifting mask comprises an inner layer with lower transmittance, formed on a substrate; and an outer layer, formed on the inner layer, with higher transmittance and being more chemically stable than the inner layer. A method of forming such an embedded bi-layer structure is provided.
申请公布号 US7029802(B2) 申请公布日期 2006.04.18
申请号 US20030462359 申请日期 2003.06.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 LIN CHENG-MING
分类号 G03F9/00;A61N5/00;G03C5/00;G03F1/00;G03F1/08;G03F7/20;G21G5/00;H01L21/00;H05H1/24 主分类号 G03F9/00
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