发明名称 Semiconductor laser, device having reduced contact resistance and manufacturing method thereof
摘要 A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substrate, a ridge having a clad layer formed on the active layer and a contact layer formed on the clad layer, an insulation film covering the side surfaces of the clad layer, and an electrode connected to the contact layer, wherein the insulation layer has an end portion in the ridge thickness direction located between the upper surface and the lower surface of the contact layer.
申请公布号 US7029936(B2) 申请公布日期 2006.04.18
申请号 US20030616923 申请日期 2003.07.11
申请人 RENESAS EASTERN JAPAN SEMICONDUCTOR, INC. 发明人 FUKAI HARUKI;KARITA HIDETAKA;NAKAMURA ATSUSHI;YAMASHITA SHIGEO
分类号 H01L21/00;H01S5/042;H01S3/04;H01S5/00;H01S5/02;H01S5/022;H01S5/0683;H01S5/22;H01S5/223 主分类号 H01L21/00
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