Method For Forming Intermetal Dielectric Film Of Semiconductor Devices,申请号KR20030055646-传众专利搜索

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发明名称	Method For Forming Intermetal Dielectric Film Of Semiconductor Devices
摘要
申请公布号	KR100571674(B1)	申请公布日期	2006.04.17
申请号	KR20030055646	申请日期	2003.08.12
申请人		发明人
分类号	H01L21/31	主分类号	H01L21/31
代理机构		代理人
主权项
地址

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