发明名称 SINTERED SILICON NITRIDE COMPACT AND CIRCUIT BOARD USING IT
摘要 <P>PROBLEM TO BE SOLVED: To provide a sintered silicon nitride compact having high strength, high toughness, and high thermal conductivity. <P>SOLUTION: At least one kind of element selected from the group consisting of Y and rare-earth elements (RE) and Mg are added as components of a sintering aid to the sintered silicon nitride compact. Microparticles with an average diameter of &le;100 nm, in which 0.6-10 wt.% of Y and the rare-earth elements in terms of the rare-earth oxides (RE<SB>x</SB>O<SB>y</SB>) and Mg in terms of magnesium oxide (MgO) are contained as the total oxide content in terms of these oxides, the weight ratio represented by (RE<SB>x</SB>O<SB>y</SB>)/(MgO) is >1, and the components of the sintering aid, oxygen, nitrogen, and silicon are contained, are deposited in silicon nitride particles composing the sintered silicon nitride compact. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006096661(A) 申请公布日期 2006.04.13
申请号 JP20050373302 申请日期 2005.12.26
申请人 HITACHI METALS LTD 发明人 IMAMURA TOSHIYUKI;KAWADA TSUNEHIRO;SOFUE MASAHISA
分类号 C04B35/584 主分类号 C04B35/584
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