| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor non-volatile memory having a large number of electric rewritings. SOLUTION: A hollow structure 10 is formed between the lower part of a floating gate 9 and the impurity region on a P-type board 1, and a control gate 12 is formed on the surface of the floating gate 9 via an inter-polysilicon insulating film 11. COPYRIGHT: (C)2006,JPO&NCIPI
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